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| Reflective Photosensors (Photo Reflectors) CNB1009 Reflective Photosensor Overview CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 9.50.3 6.50.3 4.00.2 12.00.3 (4.0) LED Unit : mm 2-o2.3 T.R 1.0 7.40.2 1.0 (1.0) 19.00.3 2-9.50.2 1.0 o2.2 Features Fast response : tr, tf = 6 s (typ.) Small size, light weight (2.54) 2 Detection of paper, film and cloth Detection of coin and bill Optical mark reading Detection of position and edge 1 Start, end mark detection of magnetic tape Absolute Maximum Ratings (Ta = 25C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 50 75 20 5 30 100 -25 to +85 Unit V mA mW V V mA mW C C (Note) ( ) Dimension is reference *1 Tstg -30 to +100 Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.34 mW/C at Ta 25C. Electrical Characteristics (Ta = 25C) Parameter Input Reverse current (DC) characteristics Capacitance between pins Output characteristics Collector cutoff current Collector to emitter capacitance Collector current Transfer characteristics Response time *1 Symbol VF IR Ct ICEO CC IC*1 IF = 50mA VR = 3V Conditions min Forward voltage (DC) VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f= 1MHz VCC = 10V, IF = 20mA, RL = 100 100 tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 100 *2 Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA Transfer characteristics measurement circuit (Ambient light is shut off completely) IC VCC IF *3 ,, , ,, ,, , ,, ,, d = 5 mm Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector 90% 10% current to decrease from 90% to 10% of its initial value. tr tf RL ,, Standard white paper (Reflective ratio 90%) , ,, 3 4 1 23 4 Pin connection Applications 2.5 min. (15.5) typ 1.2 50 max 1.5 10 0.2 Unit V A pF A pF A s 5 500 6 0.3 V 1 Reflective Photosensors (Photo Reflectors) CNB1009 IF , IC -- Ta 60 60 IF -- VF 1.6 Ta = 25C VF -- Ta IF , IC (mA) 50 IF 50 IF (mA) Forward current, collector current 40 IC 40 VF (V) 1.2 IF = 50mA 10mA Forward current Forward voltage 30 30 0.8 1mA 20 20 0.4 10 10 0 - 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Forward voltage VF (V) Ambient temperature Ta (C ) IC -- IF 10 2 VCC = 5V Ta = 25C RL = 100 10 2 IC -- VCE 160 Ta = 25C IC -- Ta VCC = 10V IF = 20mA RL = 100 120 IC (mA) 10 IC (mA) 10 IF = 30mA 1 20mA 10mA 1 Relative output current 10 2 Collector current Collector current IC (%) 80 10 -1 10 -1 40 10 -2 10 -1 1 10 10 2 10 -2 10 -1 1 10 0 - 40 - 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (C ) ICEO -- Ta 10 VCE = 10V 10 3 tr -- IC VCC = 10V Ta = 25C 800 IC -- d VCC = 10V Ta = 25C RL = 100 IF = 20mA ICEO (A) 1 10 2 IC (A) 600 tr (s) Dark current Rise time 10 -1 Collector current 10 500 100 400 10 -2 1 200 10 -3 - 40 - 20 0 20 40 60 80 100 10 -1 10 -2 10 -1 1 10 0 0 4 Ambient temperature Ta (C ) Collector current IC (mA) 2 , , d 8 12 16 RL = 1k Distance d (mm) |
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